SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1718
DESCRIPTION
·With TO-3PL package
·Complement to type 2SB1163
·Excellent linearity of h
FE
·Wide area of safe operation (ASO)
·High transition frequency f
T
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Open emitter
Open base
Open collector
CONDITIONS
VALUE
180
180
5
15
25
3.5
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
150
150
-55~150
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=10A ;I
B
=1A
I
C
=8A ; V
CE
=5V
V
CB
=180V; I
E
=0
V
EB
=3V; I
C
=0
I
C
=20mA ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
C
=8A ; V
CE
=5V
I
C
=0.5A ; V
CE
=5V
f=1MHz;V
CB
=10V
20
60
20
MIN
2SD1718
SYMBOL
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
OB
TYP.
MAX
2.5
1.8
50
50
UNIT
V
V
µA
µA
200
20
230
MHz
pF
h
FE-2
classifications
Q
60-100
S
80-160
P
100-200
2
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