SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1739
DESCRIPTION
·With TO-3PFa package
·Wide area of safe operation
·High voltage,high speed
APPLICATIONS
·Horizontal deflection output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
700
7
6
18
2.5
100
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1739
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Emitter-base breakdown voltage
CONDITIONS
I
C
=5A ;I
B
=1.2A
I
C
=5A ;I
B
=1.2A
I
E
=1mA ;I
C
=0
V
CB
=750V; I
E
=0
I
CBO
Collector cut-off current
V
CB
=1500V; I
E
=0
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=1A ; V
CE
=10V
6
2
1
10
30
MHz
mA
µA
7
10
MIN
TYP.
MAX
8.0
1.5
UNIT
V
V
V
µA
SYMBOL
V
CEsat
V
BEsat
V
(BR)EBO
Switching times
t
stg
t
f
Storage time
I
C
=5A; I
B1
=1A
I
B2
=-2A; V
CC
=200V
Fall time
0.2
µs
1.5
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1739
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
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