SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1712
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SB1157
·High transition frequency f
T
·Satisfactory linearity of h
FE
·Wide area of safe operation
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
100
5
5
8
60
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=3A ;I
B
=0.3A
I
C
=3A ; V
CE
=5V
V
CB
=100V; I
E
=0
V
EB
=3V; I
C
=0
I
C
=20mA ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1MHz
I
C
=0.5A ; V
CE
=5V
20
60
20
MIN
2SD1712
SYMBOL
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE -2
h
FE -3
C
OB
f
T
TYP.
MAX
2.0
1.8
50
50
UNIT
V
V
µA
µA
200
70
20
pF
MHz
h
FE-2
classifications
Q
60-120
S
80-60
P
100-200
2
Embedded System
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