SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1765
DESCRIPTION
·With TO-220Fa package
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
100
6
2
3
20
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SD1765
SYMBOL
TYP.
MAX
UNIT
V
(BR)CBO
Collector-base breakdown voltage
I
C
=50µA; I
C
=0
100
V
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=5mA;I
B
=0
100
V
V
CEsat
Collector-emitter saturation voltage
I
C
=1A ;I
B
=1mA
1.5
V
I
CBO
Collector cut-off current
V
CB
=100V; I
E
=0
10
µA
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
3.0
mA
h
FE
DC current gain
I
C
=1A ; V
CE
=2V
1000
10000
C
OB
Output capacitance
I
E
=0 ; V
CB
=10V;f=1MHz
25
pF
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1765
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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