SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Complement
to type 2SB1226
·High DC current gain.
·Large current capacity and wide ASO.
·DARLINGTON
APPLICATIONS
·Motor drivers,printer hammer drivers,relay
drivers,voltage regulator control.
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SD1828
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector dissipation
2
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
110
100
6
3
5
20
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=5mA; I
E
=0
I
C
=50mA; R
BE
=<
I
C
=1.5A ; I
B
=3mA
I
C
=1.5A ; I
B
=3mA
V
CB
=80V;I
E
=0
V
EB
=5V;I
C
=0
I
C
=1.5A ; V
CE
=3V
I
C
=1.5A ; V
CE
=5V
1500
MIN
110
100
2SD1828
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
0.9
1.5
2.0
0.1
3.0
V
V
mA
mA
4000
20
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=500I
B1
=-500I
B2
=1A
V
CC
=50V ,R
L
=50D
0.8
5.0
1.2
µs
µs
µs
2
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