SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Complement
to type 2SB1228
·High DC current gain.
·Large current capacity and wide ASO.
·Low saturation voltage.
·DARLINGTON
APPLICATIONS
·Suitable for use in control of motor drivers,
printer hammer drivers,relay drivers,and
constant-voltage regulators.
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SD1830
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector dissipation
2
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
110
100
6
8
12
20
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=5mA; I
E
=0
I
C
=50mA; R
BE
=>
I
C
=4A ; I
B
=8mA
I
C
=4A ; I
B
=8mA
V
CB
=80V;I
E
=0
V
EB
=5V;I
C
=0
I
C
=4A ; V
CE
=3V
I
C
=4A ; V
CE
=5V
1500
MIN
110
100
2SD1830
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
0.9
1.5
2.0
0.1
3.0
V
V
mA
mA
4000
20
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=500I
B1
=-500I
B2
=4A
V
CC
=50V ,R
L
=12.5D
0.6
4.8
1.6
µs
µs
µs
2
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