SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High
speed
·High
breakdown voltage
·High
reliability
·Built-in
damper diode
APPLICATIONS
·Color TV horizontal deflection output
·Color display horizontal deflection output
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
2SD1876
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
3
12
50
150
-55~150
UNIT
V
V
V
A
A
W
1
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1876
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Diode forward voltage
Fall time
CONDITIONS
I
C
=100mA; I
B
=0
I
C
=2A;I
B
=0.6A
I
C
=2A;I
B
=0.6A
V
CB
=800V; I
E
=0
V
CB
=1500V; R
BE
=0
V
EB
=4V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
C
=2A ; V
CE
=5V
I
EC
=3A
I
C
=3A;R
L
=66.7@
I
B1
=0.8A;I
B2
=-1.6A;V
CC
=200V
0.1
40
8
3
6
2.0
0.3
V
µs
MIN
800
5
1.5
10
1.0
130
TYP.
MAX
UNIT
V
V
V
µA
mA
mA
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
I
CBO
I
CES
I
EBO
h
FE-1
h
FE-2
V
F
t
f
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1876
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1876
4