SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1888
DESCRIPTION
·With TO-220C package
·DARLINGTON
·Complement to type 2SB1339
·High DC current gain
APPLICATIONS
·Low frequency power amplification
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
120
120
6
6
10
40
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1888
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=50µA; I
E
=0
I
C
=5mA;I
B
=0
I
C
=3A ;I
B
=6mA
V
CB
=120V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=2A ; V
CE
=3V
I
E
=-0.2A ; V
CE
=5V;f=10MHz
I
E
=0 ; V
CB
=10V;f=1MHz
2000
40
50
MIN
120
120
1.5
100
3.0
20000
MHz
pF
TYP.
MAX
UNIT
V
V
V
µA
mA
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1888
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
京公网安备 11010802033920号
EEWORLD
