SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1892
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low collector saturation voltage
·DARLINGTON
·Complement to type 2SB1252
APPLICATIONS
·Power amplification
·Optimum for 35W high-fidelity output
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
120
100
5
5
8
45
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=30mA ; I
B
=0
I
C
=4A ;I
B
=4mA
I
C
=4A ;I
B
=4mA
V
CB
=120V; I
E
=0
V
CE
=100V; I
B
=0
V
EB
=5V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=4A ; V
CE
=5V
I
C
=0.5A ; V
CE
=10V;f=1MHz
2000
5000
MIN
100
2SD1892
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE -2
f
T
TYP.
MAX
UNIT
V
2.5
3.0
100
100
100
V
V
µA
µA
µA
30000
20
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=4A; V
CC
=50V
I
B1
=-I
B2
=4mA
2.5
3.5
1.0
µs
µs
µs
h
FE-2
Classifications
Q
5000-15000
P
8000-30000
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1892
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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