SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1910
DESCRIPTION
·With TO-3PFM package
·High breakdown voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in TV horizontal output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PFM) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
600
6
3
6
40
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1910
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Diode forward voltage
CONDITIONS
I
C
=0.1A , I
B
=0
I
C
=2.5A ; I
B
=0.8A
I
C
=2.5A ; I
B
=0.8A
V
CB
=800V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=0.5A ; V
CE
=5V
I
F
=3A
50
8
MIN
600
5.0
1.5
10
200
25
2.0
V
TYP.
MAX
UNIT
V
V
V
µA
mA
SYMBOL
V
CEO(SUS)
V
CE(sat)
V
BE(sat)
I
CBO
I
EBO
h
FE
V
F
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1910
Fig.2 outline dimensions
3
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