SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1940
DESCRIPTION
·With TO-220F package
·Wide area of safe operation
APPLICATIONS
·85V/6A, AF 25 to 30W output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
MAX
100
85
6
6
10
25
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=5mA ;R
BE
=8
I
C
=5mA ;I
E
=0
I
E
=5mA ;I
C
=0
I
C
=4A ;I
B
=0.4A
I
C
=1A;V
CE
=5V
V
CB
=40V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=3A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
f=1MHz;V
CB
=10V
60
20
15
110
MIN
85
100
6
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
2SD1940
TYP.
MAX
UNIT
V
V
V
2.0
1.5
0.1
0.1
320
V
V
mA
mA
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=0.5A; I
B1
=-I
B2
=50mA
V
CC
=20V ,R
L
=40B
0.28
3.60
0.50
µs
µs
µs
h
FE-1
Classifications
D
60-120
E
100-200
F
160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1940
Fig.2 Outline dimensions
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1940
4
京公网安备 11010802033920号
EEWORLD
