2SD1913 datasheet, PDF - EEWORLD Datasheet

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2SD1913: DescriptionRF POWER TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size247KB，4 Pages; ManufacturerSAVANTIC; Websitehttp://www.svntc.com/

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2SD1913 Overview

RF POWER TRANSISTOR

2SD1913 Parametric

Parameter Name	Attribute value
state	Active

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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

DESCRIPTION

·With TO-220F package

·Complement to type 2SB1274

·High reliability.

·High breakdown voltage

·Low saturation voltage.

·Wide area of safe operation

APPLICATIONS

·60V/3A low-frequency power amplifier

·General power amplifier applications

PINNING

Base

Collector

Emitter

DESCRIPTION

2SD1913

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings (Ta=25

)

SYMBOL

CBO

CEO

EBO

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current-peak

=25

Collector dissipation

stg

Junction temperature

Storage temperature

150

-55~150

CONDITIONS

Open emitter

Open base

Open collector

VALUE

UNIT

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