SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD311
DESCRIPTION
·With TO-3 package
·High
DC current gain
·Excellent safe operating area
·Complement to type BD312
APPLICATIONS
·Designed for power amplifier applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(peak)
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
60
60
5
10
20
4
115
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.52
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BD311
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.2A ; I
B
=0
I
C
=5A ;I
B
=0.5A
I
C
=5A ;I
B
=0.5A
I
C
=5A ;V
CE
=4V
V
CB
=rated;I
E
=0
V
EB
=7V; I
C
=0
I
C
=5A ; V
CE
=4V
I
C
=10A ; V
CE
=4V
I
C
=0.5A ; V
CE
=10V,f=1MHz
25
5
4
MHz
MIN
60
1.0
1.8
1.5
1.0
1.0
TYP.
MAX
UNIT
V
V
V
V
mA
mA
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
2
FPGA/CPLD
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