SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD318
DESCRIPTION
·With TO-3 package
·High
DC current gain
·Excellent safe operating area
·Complement to type BD317
APPLICATIONS
·Designed for high power amplifiers
PINNING (See Fig.2)
PIN
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
1
2
3
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current(peak)
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-100
-7
-16
-20
-5
200
-65~200
-65~200
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
0.875
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD318
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-0.2A ; I
B
=0
I
C
=-8A ;I
B
=-0.8A
I
C
=-8A ;I
B
=-0.8A
I
C
=-8A ;V
CE
=-2.0V
V
CB
=100V;I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-5A ; V
CE
=-4V
I
C
=-10A ; V
CE
=-4V
I
C
=-1A ; V
CE
=-20V,f=0.2MHz
25
15
1
MHz
MIN
-100
-1.0
-1.8
-1.5
-1.0
-1.0
TYP.
MAX
UNIT
V
V
V
V
mA
mA
SYMBOL
V
CEO(SUS)
V
CEsat
V
BEsat
V
BE(
on
)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
2
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