SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU500
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·Designed for use in large screen color
deflection circuits.
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings (Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
700
5
6
16
4
75
-65~150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.66
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=0.5A; I
B
=0;L=10mH
I
E
=100mA; I
C
=0
I
C
=4.5A;I
B
=2A
I
C
=4.5A;V
CE
=5V
V
CE
=1000V;V
BE
=-2V
V
CE
=1500V;V
BE
=-2V
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=4.5A ; V
CE
=5V
8
3.0
MIN
700
5
TYP.
BU500
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
MAX
UNIT
V
V
1.0
1.3
0.02
1.0
10
36
V
V
mA
mA
mA
Switching times
t
s
t
f
Storage time
Fall time
1.2
1.0
µs
µs
I
C
=4.5A ;I
B1
=-I
B2
=1.5A
V
CC
=100V ;
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU500
Fig.2 Outline dimensions
3
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