SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE1320
DESCRIPTION
·With TO-220 package
·High voltage
·Low collector saturation voltage
APPLICATIONS
·For high-voltage ,power switching in
inductive circuits and line operated
switchmode applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Base current
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
T
C
=100
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1800
900
9
2
5
1.5
2.5
80
32
-65~150
-65~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.56
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Collector outoput capacitance
CONDITIONS
I
C
=50mA; I
B
=0.
I
C
=1A ;I
B
=0.5A
T
C
=100
I
C
=2A ;I
B
=1A
I
C
=1A ;I
B
=0.5A
T
C
=100
I
C
=2A ;I
B
=1A
V
CEV
=RatedV
alue
;V
BE(off)
=1.5V
T
C
=100
V
EB
=9V; I
C
=0
I
C
=2A ; V
CE
=5V
I
C
=1A ; V
CE
=5V
I
E
=0 ; V
CB
=10V;f=1.0MHz
2.5
3
MIN
900
MJE1320
SYMBOL
V
CEO(SUS)
V
CE
(sat)
-1
V
CE
(sat)
-2
V
BE
(sat)
-1
V
BE
(sat)
-2
I
CEV
I
EBO
h
FE-1
h
FE-2
C
OB
TYP.
MAX
UNIT
V
0.18
0.3
0.3
0.2
0.15
0.9
1.0
1.5
2.5
1.5
1.5
2.8
0.25
2.5
0.25
V
V
V
V
mA
mA
80
pF
Switching times resistive load,Duty Cycle@2%,t
p
=25µs
t
d
t
r
t
s
t
f
Delay time
Rise time
Storage time
Fall time
0.1
0.8
4.0
0.8
µs
µs
µs
µs
V
CC
=250V; I
C
=1A
I
B1
=I
B2
=0.5A
2
Embedded System
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