SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1018
DESCRIPTION
·With TO-220Fa package
·Low saturation voltage
·Complement to type 2SD1411
APPLICATIONS
·High current switching applications
·Power amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-80
-5
-7
-1
2
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-4A ;I
B
=-0.4A
I
C
=-4A ;I
B
=-0.4A
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-4A ; V
CE
=-1V
I
C
=-1A ; V
CE
=-4V
I
E
=0 ; V
CB
=-10V;f=1MHz
70
30
MIN
-80
2SB1018
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
TYP.
MAX
UNIT
V
-0.3
-0.9
-0.5
-1.4
-5
-5
240
V
V
µA
µA
10
250
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
R
L
=10@
I
B1
=-I
B2
=-0.3A
V
CC
=-30V
0.4
2.5
0.5
µs
µs
µs
h
FE-1
Classifications
O
70-140
Y
120-240
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1018
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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