SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1007
DESCRIPTION
·With TO-126 package
·Complement to type 2SD1378
·High breakdown voltage
APPLICATIONS
·Low frequency power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
T
a
=25
P
D
Total power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
10
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-80
-5
-0.7
1.2
W
UNIT
V
V
V
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-2mA ;I
B
=0
I
C
=-50µA ;I
E
=0
I
E
=-50µA ;I
C
=0
I
C
=-0.5A ;I
B
=-50mA
V
CB
=-50V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.1A ; V
CE
=-3V
I
E
=0; V
CB
=-10V;f=1MHz
I
E
=50mA ; V
CE
=-10V
82
14
100
MIN
-80
-80
-5
-0.2
TYP.
2SB1007
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
C
OB
f
T
MAX
UNIT
V
V
V
-0.4
-0.5
-0.5
390
20
V
µA
µA
pF
MHz
h
FE
Classifications
P
82-180
Q
120-270
R
180-390
2
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