SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SD1563A
·Low collector saturation voltage
·Large current capability
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2SB1086A
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current -peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-160
-5
-1.5
-3.0
10
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
CONDITIONS
MIN
2SB1086A
SYMBOL
TYP.
MAX
UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
Collector-emitter breakdown voltage
I
C
=-1mA ;I
B
=0
I
C
=-50µA ;I
E
=0
I
E
=-50µA ;I
C
=0
I
C
=-1.0A ;I
B
=-0.1A
I
C
=-1.0A ;I
B
=-0.1A
V
CB
=-120V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-0.1A ; V
CE
=-5V
I
C
=-0.1A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1MHz
-160
V
Collector-base breakdown voltage
-160
V
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-2.0
V
Base-emitter saturation voltage
-1.5
V
Collector cut-off current
-1.0
µA
Emitter cut-off current
-1.0
µA
DC current gain
56
270
Transition frequency
50
MHz
Output capacitance
30
pF
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1086A
Fig.2 Outline dimensions
3
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