SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1097
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
·Complement to type 2SD1588
APPLICATIONS
·For low frequency power amplifier and
low speed switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
30
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-80
-60
-5
-7
2.0
W
UNIT
V
V
V
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=-30mA; I
B
=0
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-5A ;I
B
=-0.5A
I
C
=-5A ;I
B
=-0.5A
V
CB
=-60V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-3A ; V
CE
=-1V
40
MIN
-60
-80
-5
2SB1097
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
-0.5
-1.5
-10
-10
200
V
V
µA
µA
h
FE
Classifications
M
40-80
L
60-120
K
100-200
2
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