SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1098
DESCRIPTION
·With TO-220F package
·Complement to type 2SD1589
·DARLINGTON
·High DC current gain
APPLICATIONS
·Low speed switching industrial use
·Low frequency power amplifier
PINNING
PIN
1
2
3
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
MAX
-100
-100
-7
-5
-8
-0.5
2
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
T
j
=25
unless otherwise specified
PARAMETER
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-3A; I
B
=-3mA
I
C
=-3A; I
B
=-3mA
V
CB
=-100V ;I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-3A ; V
CE
=-2V
I
C
=-5A ; V
CE
=-2V
2000
500
MIN
2SB1098
SYMBOL
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
-1.5
-2.0
-1
-3
15000
UNIT
V
V
µA
mA
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-3A ;I
B1
=-I
B2
=-3mA
R
L
=17>;V
CC
=-50V;
0.5
1
1
µs
µs
µs
h
FE-1
Classifications
R
2000-5000
O
3000-7000
Y
5000-15000
2
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