SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1155
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SD1706
·Low collector saturation voltage
·Satisfactory linearity of h
FE
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
3
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-130
-80
-7
-15
-25
80
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-7A ;I
B
=-0.35A
I
C
=-15A ;I
B
=-1.5A
I
C
=-7A ;I
B
=-0.35A
I
C
=-15A ;I
B
=-1.5A
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-3A ; V
CE
=-2V
I
C
=-8A ; V
CE
=-2V
I
C
=-0.5A ; V
CE
=-10V;f=10MHz
45
90
30
MIN
-80
SYMBOL
V
(BR)CEO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
EBO
h
FE-1
h
FE -2
h
FE -3
f
T
2SB1155
TYP.
MAX
UNIT
V
-0.5
-1.5
-1.5
-2.5
-10
-50
V
V
V
V
µA
µA
260
25
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-7A ;I
B1
=-I
B2
=-0.7A
V
CC
=-50V
0.5
1.3
0.2
µs
µs
µs
h
FE-2
classifications
Q
90-180
P
130-260
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1155
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1155
4
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