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2SB1163

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size110KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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2SB1163 Overview

POWER TRANSISTOR

2SB1163 Parametric

Parameter NameAttribute value
stateActive
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
2N4907 2N4908 2N4909
·With TO-3 package
·Excellent safe operating areas
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS(Ta=25
)
SYMBOL
PARAMETER
2N4907
V
CBO
Collector-base voltage
2N4908
2N4909
2N4907
V
CEO
Collector-emitter voltage
2N4908
2N4909
V
EBO
I
C
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-40
-60
-80
-40
-60
-80
-7
-10
-4
150
200
-65~200
V
A
A
W
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
(th) jc
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
/W

2SB1163 Related Products

2SB1163 2N4907 2N4908 2N4909
Description POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR POWER TRANSISTOR
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