SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1193
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·High speed switching
·DARLINGTON
·Complement to type 2SD1773
APPLICATIONS
·For medium speed switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
50
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-120
-120
-7
-8
-12
2
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1193
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
DC current gain
CONDITIONS
I
C
=-2A; R
BE
=<;L=10mH
I
E
=-50mA; I
C
=0
I
C
=-4A ;I
B
=-8mA
I
C
=-8A ;I
B
=-80mA
I
C
=-4A ;I
B
=-8mA
I
C
=-8A ;I
B
=-80mA
V
CB
=-120V; I
E
=0
V
CE
=-100V; R
BE
=<
I
C
=-4A ; V
CE
=-3V
1000
MIN
-120
-7
-1.5
-3.0
-2.0
-3.5
-100
-10
20000
TYP.
MAX
UNIT
V
V
V
V
V
V
µA
µA
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
CEO
h
FE
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-4A ;I
B1
=-I
B2
=-8mA
V
CC
=-50V
0.7
3.5
2.0
µs
µs
µs
2
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