SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1257
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2014
·High DC current gain
·DARLINGTON
APPLICATIONS
·Driver for solenoid ,relay and motor
and general purpose
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-60
-60
-6
-4
-6
-1
25
150
-55~150
UNIT
V
V
V
A
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-3A; I
B
=-6mA
I
C
=-3A; I
B
=-6mA
V
CB
=-60V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-3A ; V
CE
=-4V
I
E
=0.2A ; V
CE
=-12V
I
E
=0; f=1MHz;V
CB
=-10V
2000
MIN
-60
2SB1257
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
C
OB
TYP.
MAX
UNIT
V
-1.5
-2.0
-10
-10
V
V
µA
µA
150
75
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-3A; I
B1
=-I
B2
=-10mA
V
CC
=-30V ,R
L
=10C
0.4
0.8
0.6
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1257
Fig.2 Outline dimensions
3
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