SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1272
DESCRIPTION
·With TO-126 package
·DARLINGTON
·High DC current gain
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter -base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-100
-100
-7
-2
10
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1272
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=-10mA;I
B
=0
I
C
=-1mA; I
E
=0
I
E
=-5mA;I
C
=0
I
C
=-2A; I
B
=-2mA
I
C
=-2A; I
B
=-2mA
V
CB
=100V; I
E
=0
V
CE
=100V; I
B
=0
V
EB
=-7V; I
C
=0
I
C
=-1A ; V
CE
=-2V
1000
MIN
-100
-100
-7
-2.0
-2.5
-0.1
-0.5
-5.0
10000
TYP.
MAX
UNIT
V
V
V
V
V
mA
mA
mA
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE
2
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