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2SB1274

Description
RF POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size252KB,4 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
Download Datasheet Parametric View All

2SB1274 Overview

RF POWER TRANSISTOR

2SB1274 Parametric

Parameter NameAttribute value
stateActive
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1274
DESCRIPTION
·With TO-220F package
·Complement
to type 2SD1913
·High
reliability.
·High
breakdown voltage
·Low saturation voltage.
·Wide area of safe operation
APPLICATIONS
·60V/3A low-frequency power amplifier
·General power amplifier applications
PINNING
PIN
1
2
3
Emitter
Collector
Base
Fig.1 simplified outline (TO-220F) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector dissipation
2
T
j
T
stg
Junction temperature
Storage temperature
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-60
-6
-3
-8
20
W
UNIT
V
V
V
A
A
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