SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1287
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·Low saturation voltage
·Complement to type 2SD1765
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier and
power driver applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
20
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-100
-8
-2
-3
2
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1287
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
CONDITIONS
I
C
=-5mA; I
B
=0
I
C
=-50µA; I
E
=0
I
C
=-1A ;I
B
=-1mA
V
CB
=-100V; I
E
=0
V
EB
=-7V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
E
=0 ; V
CB
=-10V;f=1MHz
1000
35
MIN
-100
-100
-1.5
-10
-3.0
10000
pF
TYP.
MAX
UNIT
V
V
V
µA
mA
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
I
CBO
I
EBO
h
FE
C
OB
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1287
Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm)
3
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