SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB634
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For low frequency power amplifier
applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-120
-120
-6
-7
60
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
CONDITIONS
I
C
=-30mA ;I
B
=0
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-3A; I
B
=-0.3A
V
CB
=-120V; I
E
=0
MIN
-120
-120
-6
2SB634
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
TYP.
MAX
UNIT
V
V
V
-1.5
V
Collector cut-off current
-0.1
mA
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
V
EB
=-6V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
40
15
-0.1
320
mA
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB634
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
京公网安备 11010802033920号
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