SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB689
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·For low frequency power amplifier, TV
vertical deflection ouptut applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
1.8
150
-45~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-100
-100
-4
-4
-5
40
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-10mA; R
BE
=<
I
E
=-1mA; I
C
=0
I
C
=-1A;I
B
=-0.1 A
V
CE
=-80V; R
BE
=<
V
EB
=-3.5V; I
C
=0
I
C
=-0.5A ; V
CE
=-4V
I
C
=-50mA ; V
CE
=-4V
50
25
MIN
-100
-4
2SB689
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CEO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
-1.0
-100
-50
250
350
V
µA
µA
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB689
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3