SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB720
DESCRIPTION
·With TO-220 package
·High V
CEO
·High power dissipation
APPLICATIONS
·Power amplifier
·
TV vertical deflection output
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-200
-200
-5
-2.0
-3.0
25
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-5mA ,I
B
=0
I
C
=-0.1mA ,I
E
=0
I
E
=-0.1mA ,I
C
=0
I
C
=-500mA; I
B
=-50mA
I
C
=-500mA; I
B
=-50mA
V
CB
=-200V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-0.15A ; V
CE
=-5V
I
C
=-0.15A ; V
CE
=-5V
35
MIN
-200
-200
-5
2SB720
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
TYP.
MAX
UNIT
V
V
V
-1.0
-1.5
-10
-10
200
100
V
V
µA
µA
MHz
2
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