SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB753
DESCRIPTION
·With TO-220C package
·Complement to type 2SD843
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·High current switching applications
·Power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
40
150
-50~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-100
-80
-5
-7
1.5
W
UNIT
V
V
V
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-50mA; I
B
=0
I
C
=-4A; I
B
=-0.4A
I
C
=-4A; I
B
=-0.4A
V
CB
=-100V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-4A ; V
CE
=-1V
I
E
=0 ; V
CB
=-10V; f=1MHz
I
C
=-1A ; V
CE
=-4V
70
30
250
10
MIN
-80
-0.3
-0.9
2SB753
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
TYP.
MAX
UNIT
V
-0.5
-1.4
-5
-5
240
V
V
µA
µA
pF
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
B1
=- I
B2
=-0.3A ; V
CC
=-30V
R
L
=10@
0.4
2.5
0.5
µs
µs
µs
h
FE-1
Classifications
O
70-140
Y
120-240
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB753
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB753
4
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