SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1490
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD2250
·High DC current gain
·Low collector saturation voltage
·DARLINGTON
APPLICATIONS
·For power amplification
·Optimum for HiFi output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
3.5
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-160
-140
-5
-7
-12
90
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-30mA ;I
B
=0
I
C
=-6A ;I
B
=-6mA
I
C
=-6A ;I
B
=-6mA
V
CB
=-160V; I
E
=0
V
CE
=-140V; I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-6A ; V
CE
=-5V
I
C
=-0.5A ; V
CE
=-10V;f=1MHz
2000
5000
MIN
-140
2SB1490
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
CEO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
-2.5
-3.0
-100
-100
-100
V
V
µA
µA
µA
30000
20
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-6A ;I
B1
=-I
B2
=-6mA
V
CC
=-50V
1.0
1.5
1.2
µs
µs
µs
h
FE-2
classifications
Q
5000-150000
P
8000-30000
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1490
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
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