SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB816
DESCRIPTION
·With TO-3PN package
·Complement to type 2SD1046
·Wide area of safe operation
APPLICATIONS
·For LF Power Amplifier, 50W Output
Large Power Switching Applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-150
-120
-6
-8
-12
80
150
-40~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
Collector output capacitance
CONDITIONS
I
C
=-50mA ;R
BE
=
;
I
C
=-5mA ;I
E
=0
I
E
=-5mA ;I
C
=0
I
C
=-5A; I
B
=-0.5A
I
C
=-1A;V
CE
=-5V
V
CB
=-80V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-5A ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
f=1MHz;V
CB
=-10V
60
20
15
220
MIN
-120
-150
-6
-1.0
TYP.
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
2SB816
MAX
UNIT
V
V
V
-2.0
-1.5
-0.1
-0.1
200
V
V
mA
mA
MHz
pF
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-1.0A ;I
B1
=-I
B2
=-0.1A
V
CC
=20V;R
L
=20C
0.22
0.93
0.37
µs
µs
µs
h
FE-1
Classifications
D
60-120
E
100-200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB816
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB816
4
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