SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB849
·
DESCRIPTION
·With TO-3PN package
·Complement to type 2SD1110
·Wide area of safe operation
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS (T
C
=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-120
-120
-7
-7
80
150
-55~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-10mA ;I
B
=0
I
C
=-5A ;I
B
=-0.5A
I
C
=-5A ;I
B
=-0.5A
V
CB
=-120V; I
E
=0
V
EB
=-6V; I
C
=0
I
C
=-20mA ; V
CE
=-5V
I
C
=-1A ; V
CE
=-5V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-0.2A ; V
CE
=-5V
20
40
340
14
MIN
-120
TYP.
2SB849
SYMBOL
V
CEO(BR)
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE -2
C
OB
f
T
MAX
UNIT
V
-2.0
-2.0
-50
-50
V
V
µA
µA
200
pF
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB849
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3