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2SB834

Description
Silicon PNP Power Transistors
File Size127KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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2SB834 Overview

Silicon PNP Power Transistors

Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With
TO-3 package
·Low
collector saturation voltage
·DARLINGTON
·Complement
to type 2N6055;2N6056
APPLICATIONS
·General-purpose
power amplifier and low
frequency swithing applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6053 2N6054
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(T
C
=25
℃)
SYMBOL
V
CBO
PARAMETER
2N6053
Collector-base voltage
2N6054
2N6053
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Collector-emitter voltage
2N6054
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-80
-5
-8
-16
-120
100
200
-65~200
V
A
A
mA
W
Open emitter
-80
-60
V
CONDITIONS
VALUE
-60
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.75
UNIT
℃/W

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Index Files: 1409  1976  1706  1173  1733  29  40  35  24  43 
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