SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB857 2SB858
·
DESCRIPTION
·With TO-220C package
·Complement to type 2SD1133/1134
APPLICATIONS
·Low frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings(Tc=25 )
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
2SB857
V
CEO
Collector-emitter voltage
2SB858
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
-60
-5
-4
-8
40
150
-45~150
V
A
A
W
CONDITIONS
Open emitter
VALUE
-70
-50
V
UNIT
V
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
2SB857
I
C
=-50mA; R
BE
=;
2SB858
I
C
=-10µA; I
E
=0
I
E
=-10µA; I
C
=0
I
C
=-2 A;I
B
=-0.2 A
I
C
=-1A ; V
CE
=-4V
V
CB
=-50V; I
E
=0
I
C
=-1A ; V
CE
=-4V
I
C
=-0.1A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-4V
CONDITIONS
SYMBOL
2SB857 2SB858
MIN
-50
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
V
-60
-70
-5
-1.0
-1.0
-1
60
35
15
MHz
320
V
V
V
V
µA
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
h
FE-1
h
FE-2
f
T
Collector-base breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
DC current gain
DC current gain
Transition frequency
h
FE-1
classifications
B
60-120
C
100-200
D
160-320
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB857 2SB858
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB857 2SB858
4
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