SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistor
2SB885
DESCRIPTION
·With TO-220C package
·DARLINGTON
·High DC durrent gain
·Low collector saturation voltage
·Complement to type 2SD1195
APPLICATIONS
·For motor drivers,printer hammer
drivers,relay drivers,voltage regulator
control applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-DC
Collector current-Pulse
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
1.75
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-110
-100
-6
-5
-8
35
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistor
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-50mA, R
BE
=?
I
C
=-5mA, I
E
=0
I
C
=-2.5A ,I
B
=-5mA
I
C
=-2.5A ,I
B
=-5mA
V
CB
=-80V, I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-2.5A ; V
CE
=-3V
V
CE
=-5V, I
C
=-2.5A
1500
20
MIN
-100
-110
TYP.
2SB885
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BE sat
I
CBO
I
EBO
h
FE
f
T
MAX
UNIT
V
V
-1.5
-2.0
-0.1
-3.0
V
V
mA
mA
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Turn-off time
I
C
=-2A ; V
CC
=-50V
I
B1
=-I
B2
=-4mA;R
L
=25E
0.7
1.3
1.5
µs
µs
µs
2
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