SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·High DC current gain.
·Large current capacity and wide ASO.
·Low saturation voltage.
·DARLINGTON
APPLICATIONS
·Motor drivers, printer
·Hammer drivers
·Relay drivers,
·Voltage regulator control
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SB887
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-110
-100
-6
-10
-15
70
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB887
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-50mA ;R
BE
=
<
I
C
=-5mA ;I
E
=0
I
C
=-5A; I
B
=-10mA
I
C
=-5A; I
B
=-10mA
V
CB
=-80V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-5A ; V
CE
=-3V
I
C
=-5A ; V
CE
=-5V
1500
4000
20
MHz
MIN
-100
-110
-1.0
-1.5
-2.0
-0.1
-3.0
TYP.
MAX
UNIT
V
V
V
V
mA
mA
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
f
T
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB887
Fig.2 outline dimensions
3
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