SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB900
DESCRIPTION
·With TO-220C package
·Low collector saturation voltage
·Wide area of safe operation
APPLICATIONS
·For power amplifier and switching
applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-50
-50
-5
-4
40
150
-50~150
UNIT
V
V
V
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=-1mA; I
B
=0
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-2A; I
B
=-0.2A
I
C
=-2A ; V
CE
=-4V
V
CB
=-50V; I
E
=0
V
CE
=-50V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-4V
40
MIN
-50
-50
-5
2SB900
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
CEO
I
EBO
h
FE
TYP.
MAX
UNIT
V
V
V
-1.0
-1.4
-0.1
-1.0
-0.1
V
V
mA
mA
mA
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB900
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
京公网安备 11010802033920号
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