SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB921
DESCRIPTION
·With TO-220C package
·Complement to type 2SD1237
·Low collector saturation voltage
·Large current capacity
APPLICATIONS
·Suitable for relay drivers,high-speed
inverters,converters,and other general
large current switching applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
T
a
=25
P
C
Collector dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
40
150
-50~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-120
-120
-6
-7
-12
1.75
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-1mA; R
BE
=;
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-4A; I
B
=-0.4A
V
CB
=-80V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-4A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-5V
70
30
20
MIN
-120
-120
-6
2SB921
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
V
V
-0.5
-0.1
-0.1
280
V
mA
mA
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Turn-off time
I
C
=-2A ; V
CC
=-50V
I
B1
=-I
B2
=-0.2A;R
L
=1.67B
0.2
0.7
0.2
µs
µs
µs
h
FE-1
Classifications
Q
70-140
R
100-200
S
140-280
2
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