SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB904
DESCRIPTION
·With TO-3PN package
·Complement to type 2SD1213
·Low collector saturation voltage
·Large current capacity
APPLICATIONS
·Large current switching of relay drivers,
high-speed inverters,converters
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2.5
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-30
-6
-20
-30
60
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-1mA ;R
BE
=
:
I
C
=-1mA ;I
E
=0
I
E
=-1mA ;I
C
=0
I
C
=-8A; I
B
=-0.4A
V
CB
=-40V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-10A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-5V
70
30
MIN
-30
-60
-6
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
2SB904
TYP.
MAX
UNIT
V
V
V
-0.25
-0.5
-0.1
-0.1
280
V
mA
mA
120
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-10A ;I
B1
=-I
B2
=-0.5A
V
CC
=-10V;R
L
=1C
0.3
0.3
0.02
µs
µs
µs
h
FE-1
Classifications
Q
70-140
R
100-200
S
140-280
2
PCB Design
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