Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1195
DESCRIPTION
·With
TO-202 package
·High
power dissipation
·Complement
to type 2SC2483
APPLICATIONS
·For
high voltage and general
purpose amplification
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-202) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
T
a
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-160
-160
-6
-1.5
-0.5
2
UNIT
V
V
V
A
A
P
C
Collector power dissipation
T
C
=25℃
15
175
-55~150
W
T
j
T
stg
Junction temperature
Storage temperature
℃
℃
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
2SA1195
TYP.
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
=-10mA; I
B
=0
160
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-500mA ;I
B
=-50m A
-1.0
V
V
BE
Base-emitter on voltage
I
C
=-5mA ; V
CE
=-5V
-0.7
V
h
FE-1
DC current gain
I
C
=-200mA ; V
CE
=-5V
60
200
h
FE-2
DC current gain
I
C
=-500mA ; V
CE
=-5V
40
I
CBO
Collector cut-off current
V
CB
=-150V; I
E
=0
-1
μA
I
EBO
Emitter cut-off current
V
EB
=-6V; I
C
=0
-1
μA
C
OB
Output capacitance
I
E
=0; V
CB
=-10V;f=1MHz
35
pF
f
T
Transition frequency
I
E
=-100mA ; V
CB
=-5V
15
50
MHz
h
FE
classifications
R
60-120
O
100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1195
Fig.2 outline dimensions
3
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