SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB945
DESCRIPTION
·With TO-220Fa package
·Large collector current I
C
·Low collector saturation voltage
·Complement to type
2SD1270
APPLICATIONS
·For power switching applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
T
a
=25
P
C
Collector power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
40
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-130
-80
-7
-5
-10
2
W
UNIT
V
V
V
A
A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Emitter cut-off current
Collector cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-10mA ,I
B
=0
I
C
=-4A, I
B
=-0.2A
I
C
=-4A, I
B
=-0.2A
V
EB
=-5V; I
C
=0
V
CB
=-100V; I
E
=0
I
C
=-0.1A ; V
CE
=-2V
I
C
=-2A ; V
CE
=-2V
I
C
=-0.5A; V
CE
=-10V,f=10MHz
45
90
MIN
-80
SYMBOL
V
(BR)CEO
V
CEsat
V
BEsat
I
EBO
I
CBO
h
FE-1
h
FE-2
f
T
2SB945
TYP.
MAX
UNIT
V
-0.5
-1.5
-50
-10
V
V
µA
µA
260
30
MHz
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=-2A;I
B1
=-0.2A ,I
B2
=0.2A
0.13
0.5
0.13
µs
µs
µs
h
FE-2
Classifications
Q
90-180
P
130-260
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB945
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB945
4
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