SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB980
DESCRIPTION
·With TO-3PN package
·Wide area of safe operation
·Large current capability
APPLICATIONS
·For audio frequency output applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Tc=25 )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open emitter
Open base
Open collector
CONDITIONS
VALUE
-120
-120
-5
-6
-10
70
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=-50mA ;R
BE
=;
I
C
=-5mA ;I
E
=0
I
E
=-5mA ;I
C
=0
I
C
=-4A ;I
B
=-0.4A
I
C
=-1A;V
CE
=-5V
V
CB
=-120V I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-1A ; V
CE
=-5V
I
C
=-3A ; V
CE
=-5V
60
20
MIN
-120
-120
-5
2SB980
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
TYP.
MAX
UNIT
V
V
V
-2.0
-1.5
-50
-50
200
V
V
µA
µA
2
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