SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB992
DESCRIPTION
·With TO-220 package
·Low collector saturation voltage
·Large current capacity
APPLICATIONS
·Suitable for relay drivers,high-speed
Inverters,converters,and other general
large-current switching applications
PINNING
PIN
1
2
3
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-100
-80
-7
-7
-10
40
150
-55~150
UNIT
V
V
V
A
A
W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-1mA ,R
BE
=9
I
C
=-1mA ,I
E
=0
I
E
=-1mA ,I
C
=0
I
C
=-4A; I
B
=-0.4A
V
CB
=-80V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-1V
I
C
=-4A ; V
CE
=-1V
I
C
=-1A ; V
CE
=-5V
70
30
10
MIN
-80
-100
-7
2SB992
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
TYP.
MAX
UNIT
V
V
V
-0.4
-5
-5
240
V
µA
µA
MHz
2
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