SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3691
DESCRIPTION
·With TO-220Fa package
·Large current ,high speed
·Low saturation voltage
APPLICATIONS
·Designed for high speed and power
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-peak
Base current
T
a
=25
P
T
Total power dissipation
T
C
=25
T
j
T
stg
Junction temperature
Storage temperature
25
150
-55~150
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
60
7
5
10
2.5
2
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3691
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=3A; I
B
=0.3A,L=1mH
I
C
=3A; I
B
=0.15 A
I
C
=4A; I
B
=0.2A
I
C
=3A; I
B
=0.15 A
I
C
=4A; I
B
=0.2A
V
CB
=60V; I
E
=0
V
CE
=60V; V
BE
=-1.5V
Ta=125
V
EB
=5V; I
C
=0
I
C
=0.5A ; V
CE
=2V
I
C
=1A ; V
CE
=2V
I
C
=3A ; V
CE
=2V
I
E
=0; V
CB
=10V;f=1MHz
I
C
=0.5A ; V
CE
=10V
100
100
60
70
150
pF
MHz
200
400
MIN
60
0.3
0.5
1.2
1.5
10
10
1.0
10
TYP.
MAX
UNIT
V
V
V
V
V
µA
µA
mA
µA
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
I
CBO
I
CEX
I
EBO
h
FE-1
h
FE-2
h
FE-3
C
OB
f
T
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=3A;R
L
=17B
I
B1
=-I
B2
=0.15A
V
CC
C50V
0.3
1.5
0.3
µs
µs
µs
h
FE-2
classifications
M
100-200
L
150-300
K
200-400
2
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