SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·Fast switching speed
·Wide area of safe operation
·High voltage,high reliability
APPLICATIONS
·For switching regulator applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2SC4110
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(T
C
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
T
C
=25
P
C
Collector power dissipation
T
a
=25
T
j
T
stg
Junction temperature
Storage temperature
2.5
150
-55~150
Open emitter
Open base
Open collector
CONDITIONS
VALUE
500
400
7
25
40
8
160
W
UNIT
V
V
V
A
A
A
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Transition frequency
Output capacitance
CONDITIONS
I
C
=10mA ;R
BE
=<
I
C
=1mA; I
E
=0
I
E
=1mA; I
C
=0
I
C
=16A; I
B
=3.2A
I
C
=16A; I
B
=3.2A
V
CB
=400V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=3.2A ; V
CE
=5V
I
C
=16A ; V
CE
=5V
I
C
=10mA ; V
CE
=5V
I
C
=3.2A ; V
CE
=10V
I
E
=0; V
CB
=10V,f=1MHz
15
10
10
MIN
400
500
7
2SC4110
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
C
ob
TYP.
MAX
UNIT
V
V
V
0.8
1.5
10
10
50
V
V
µA
µA
20
300
MHz
pF
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=20A; I
B1
=4A;I
B2
=-8A
R
L
=10C;V
CC
=200V
0.5
2.5
0.3
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4110
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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