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2SC4138

Description
10 A, 400 V, NPN, Si, POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size172KB,4 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
Download Datasheet Parametric View All

2SC4138 Overview

10 A, 400 V, NPN, Si, POWER TRANSISTOR

2SC4138 Parametric

Parameter NameAttribute value
Maximum collector current10 A
Maximum Collector-Emitter Voltage400 V
Number of terminals3
Processing package descriptionMT-100, TO-3P, 3 PIN
stateActive
structureSINGLE
Minimum DC amplification factor10
jesd_30_codeR-PSFM-T3
jesd_609_codee0
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
Maximum operating temperature150 Cel
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typeNPN
wer_dissipation_max__abs_80 W
qualification_statusCOMMERCIAL
sub_categoryOther Transistors
surface mountNO
terminal coatingNOT SPECIFIED
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Rated crossover frequency10 MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4138
DESCRIPTION
·With TO-3PN package
·High voltage
·High speed switching
APPLICATIONS
·For switching regulator and
general purpose applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
CONDITIONS
Open emitter
Open base
Open collector
VALUE
500
400
10
10
20
4
80
150
-55~150
UNIT
V
V
V
A
A
A
W
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