Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJE18006
DESCRIPTION
・With
TO-220C package
・High
voltage ,high speed
APPLICATIONS
・Designed
for use in 220V line-operated
switchmode power supplies and electronic
light ballasts.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
j
T
stg
固电
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
导½
半
PARAMETER
CONDITIONS
CH
IN
Base current
Collector current (DC)
ANG
MIC
E SE
Open emitter
Open base
Open collector
OR
CT
NDU
O
VALUE
1000
450
9
6
15
4
8
UNIT
V
V
V
A
A
A
A
W
℃
℃
Collector current-Peak
Base current-Peak
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
100
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
R
th j-A
PARAMETER
Thermal resistance junction to case
Thermal resistance junction to ambient
MAX
1.25
62.5
UNIT
℃/W
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
CONDITIONS
I
C
=0.1A; L=25mH
I
C
=1.5A ;I
B
=0.15A
T
C
=125℃
I
C
=3A ;I
B
=0.6A
T
C
=125℃
I
C
=1.5A; I
B
=0.15A
I
C
=3A; I
B
=0.6A
V
CES
=RatedV
CES;
V
EB
=0
T
C
=125℃
V
CES
=800V
I
CEO
I
EBO
h
FE-1
h
FE-2
h
FE-3
h
FE-4
f
T
C
OB
Collector cut-off current
Emitter cut-off current
V
CE
=RatedV
CEO
; I
B
=0
V
EB
=9V; I
C
=0
I
C
=0.5A ; V
CE
=5V
MIN
450
MJE18006
TYP.
MAX
UNIT
V
0.6
0.65
0.7
0.8
1.2
1.3
0.1
0.5
0.1
0.1
0.1
34
V
V
V
V
I
CES
Collector cut-off current
mA
mA
mA
电半
固
DC current gain
DC current gain
DC current gain
DC current gain
导½
ANG
CH
IN
Transition frequency
Collector outoput capacitance
Turn-on time
Turn-off time
Turn-on time
Turn-off time
MIC
E SE
I
C
=3A ; V
CE
=1V
I
C
=1.5A ; V
CE
=1V
I
C
=10mA ; V
CE
=5V
OR
CT
NDU
O
14
6
11
10
14
75
I
C
=0.5A ; V
CE
=10V;f=1.0MHz
I
E
=0;V
CB
=10V;f=1.0MHz
MHz
pF
Switching times resistive load,Duty Cycle≤10%,Pulse Width=20μs
t
on
t
off
t
on
t
off
V
CC
=300V ,I
C
=3A
I
B1
=0.6A; I
B2
=1.5A
90
1.7
0.2
1.2
180
2.5
0.3
2.5
ns
μs
μs
μs
V
CC
=300V ,I
C
=1.3A
I
B1
=0.13A; I
B2
=0.65A
2
RF/Wirelessly
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